Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD
نویسندگان
چکیده
1 Department of Physics and Astronomy, Georgia State University, 29 Peachtree Center Ave, Atlanta, GA 30303, USA 2 Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany 3 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA 4 Dept. Electrical & Computer Engineering, University of North Carolina Charlotte, Charlotte, NC 28223, USA 5 Dept. Materials Science and Engineering, North Carolina State University, Raleigh NC 27695, USA
منابع مشابه
Optical and Structural Properties of Indium Nitride Epilayers Grown by High-Pressure Chemical Vapor Deposition and Vibrational Studies of ZGP Single Crystal
The objective of this dissertation is to shed light on the physical properties of InN epilayers grown by High-Pressure Chemical Vapor Deposition (HPCVD) for optical device applications. Physical properties of HPCVD grown InN layers were investigated by X-ray diffraction, Raman scattering, infrared reflection spectroscopies, and atomic force microscopy. The dependencies of physical properties as...
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In this research the growth of InN epilayers by high-pressure chemical vapor deposition (HPCVD) and structural, optical properties of HPCVD grown InN layers has been studied. We demonstrated that the HPCVD approach suppresses the thermal decomposition of InN, and therefore extends the processing parameters towards the higher growth temperatures (up to 1100K for reactor pressures of 15 bar, mola...
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The growth of high-quality InN and indium rich group III-nitride alloys are of crucial importance for the development of high-efficient energy conversion systems, THz emitters and detectors structures, as well as for high-speed linear/nonlinear optoelectronic elements. However, the fabrication of such device structures requires the development of growth systems with overlapping processing windo...
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Unique physical properties such as small effective mass, high electron drift velocities, high electron mobility and small band gap energy make InN a candidate for applications in highspeed microelectronic and optoelectronic devices. The aim of this research is to understand the surface properties, desorption kinetics and thermal stability of InN epilayers that affect the growth processes and de...
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A numerical model was developed to simulate vapor deposition in high-pressure chemical vapor-deposition reactors, under different conditions of pressure, temperature, and flow rates. The model solved for steady-state gas-phase and heterogeneous chemical kinetic equations coupled with fluid dynamic equations within a three-dimensional grid simulating the actual reactor. The study was applied to ...
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تاریخ انتشار 2011